| 학회 | 한국재료학회 |
| 학술대회 | 2005년 봄 (05/26 ~ 05/27, 무주리조트) |
| 권호 | 11권 1호 |
| 발표분야 | 반도체재료 |
| 제목 | MOCVD를 이용하여 sapphire(0001)에 성장한 Al 함량에 따른 AlGaN/GaN의 특성 |
| 초록 | The AlxGa1-xN/GaN structures were fabricated by metal-organic chemical vapor deposition. AlGaN layers are known to be the most promising for UV devices by virtue of their direct bandgap tenability from 3.4 to 6.2eV. Several groups have reported that the biaxial tensile strain generated on AlGaN layer was strongly related to the Al alloy composition in AlGaN/GaN structures. AlGaN/GaN has demonstrated excellent device characteristics, which make them excellent candidates for high temperature, high power, high frequency, and low noise applications. The nature of tensile strain AlGaN layer, however, tends to defects or cracks which severely deteriorate the operating properties of the devices. To avoid cracks formation, many activities have stressed upon low Al content AlXGa1-XN films to minimize the mismatch between AlGaN and GaN with only limited efforts on the study of high Al content AlXGa1-XN films and related heterostructures. PL and AFM measurements were performed at room temperature using the He-Cd laser excitation and surface roughness, respectively. As Al mole fraction increases, the values of the root mean square (RMS) grew gradually higher. |
| 저자 | 박현규1, 강호재1, 진정근1, 연대흠1, 최재홍1, 김지원2, 변동진1 |
| 소속 | 1고려대, 2산업기술시험원 |
| 키워드 | AlGaN; GaN; MOCVD |
