| 학회 |
한국재료학회 |
| 학술대회 |
2007년 가을 (11/02 ~ 11/02, 성균관대학교) |
| 권호 |
13권 2호 |
| 발표분야 |
반도체재료 |
| 제목 |
Investigation on morphological and structural evolution of Ga-doped ZnO Nanocrystals |
| 초록 |
ZnO:Ga nanocrystals were synthesized by vapor-solidification method to investigate morphological and structural evolution induced by Ga-doping. We have optimized the graphite content in the source in terms of photoluminescence properties. As Ga-content increasing, the shape of products changed from tetrapod to rod-type structure due to structural evolution from ZnO (wurtzite) to Ga2O3 (monoclinic) structure. Ga-content was controlled within full composition range with varying Ga2O3-content in the source mixture, which implies the feasibility of Ga as a efficient impurity for ZnO nanocrystals, but HXPES also indicates a possibilities of phase separation especially for the ZnO:Ga with high Ga-content, concentrated at the surface area. |
| 저자 |
오승준1, 정미나1, 하선여1, 김정진2, Keisuke Kobayashi3, 최성국1, 이홍찬1, 이상태1, 조영래4, Takafumi Yao5, 장지호6
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| 소속 |
1한국해양대, 2삼성전자 포토마스크팀, 3NIMS/Spring-8, 4부산대, 5IMR, 6Tohoku Univ. |
| 키워드 |
GZO; ZnO:Ga; nanocrystal; Ga-doped ZnO
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| E-Mail |
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