| 학회 |
한국고분자학회 |
| 학술대회 |
2013년 가을 (10/11 ~ 10/12, 창원컨벤션센터) |
| 권호 |
38권 2호 |
| 발표분야 |
분자전자 부문위원회 |
| 제목 |
Synthesis of an Ambipolar Silole-based Small Molecular Semiconductor and Its Application in Transistor and Nonvolatile Memory Device |
| 초록 |
We characterized the electrical properties of field-effect transistor and nonvolatile memory based on Si1TDPP-EE-C6.FETs device exhibited ambipolar transport properties with a hole mobility of 7.3×10^–5 cm^2/Vs and an electron mobility of 1.6×10^-5 cm^2/Vs. Annealing at 110°C leads to increase in the carrier mobility, hole and electron mobilities of 3.7×10^–3 and 5.1×10^–4 cm^2/Vs, respectively.The change in crystalline structure and surface morphology were investigated by grazing incidence X-ray diffraction and atomic force microscopy, which indicated that annealing improved the film crystallinity and promoted the formation of a longer-range lamellar structure.Moreover, nonvolatile memory based on Si1TDPP-EE-C6 was demonstrated by the incorporation of Au NPs as charge trapping sites at the interface between SiO2 and cross-linked PVP dielectrics.The device exhibited reliable non-volatile memory characteristics, which include memory window of 98 V,on/off-current ratio of 10^3. |
| 저자 |
강웅기1, 조정호1, 김봉수2, 정민우2, 차원숙3, 김현정3
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| 소속 |
1성균관대, 2KIST, 3서강대 |
| 키워드 |
ambipolar semiconductor; organic field-effect transistor; nonvolatile memory device; diketopyrrolopyrrole
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| E-Mail |
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