| 학회 |
한국고분자학회 |
| 학술대회 |
2011년 가을 (10/06 ~ 10/07, 김대중 컨벤션센터) |
| 권호 |
36권 2호 |
| 발표분야 |
대학원생 구두발표 |
| 제목 |
Conductive Alignment Layer for Liquid CrystalControl via High Resolution ITO Nanopattern with High Aspect Ratio |
| 초록 |
We describe a novel method for liquid crystal (LC) alignment using nano-patterns of electrically conductive indium-tin-oxide (ITO) layers with high resolution (ca ＜ 20nm) and high aspect ratio (ca. 8), fabricated by the second sputtering lithography (SSL). The ITO pattern developed in this manner not only provides high anchoring energy comparable to that of rubbed polyimides, but also maintains its low resistivity as an electrode. As a result, the patterned ITO can function as an electrode and alignment layer at the same time, which facilitates successful fabrication of bifunctional conductive alignment layer for LC devices. The LC cells fabricated using patterned ITO substrates show highly stable alignment of LCs over large area and good electro-optical responses. Moreover, systematic approach made by the precise control of pattern dimensions allows us to estimate a critical anchoring energy required for an effective LC alignment based on Berremans’ theory. |
| 저자 |
정현수1, 전환진1, 김윤호1, 오문비2, 강신웅2, 정희태1
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| 소속 |
1KAIST, 2전북대 |
| 키워드 |
Alignment; Liquid Crystal; Indium Tin Oxide; Nanopattern; Lithography; ion bombardment
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| E-Mail |
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