| 초록 |
Although the TiO2 is the most popular ETL used in PSCs, its processing temperature and moderate electron mobility hamper the performance and feasibility. Herein, the highly stable, low-temperature processed MgZnO nanocrystal-based ETLs for dynamic hot-air processed Mn2+ incorporated CsPbI2Br AI-PSCs are reported. By holding its regular planar “n–i–p” type device architecture, the MgZnO ETL and poly(3-hexylthiophene-2,5-diyl) hole transporting layer, 15.52% power conversion efficiency (PCE) is demonstrated. The thermal-stability analysis reveals that the conventional ZnO ETL-based AI-PSCs show a serious instability and poor efficiency than the Mg2+ modified MgZnO ETLs. The photovoltaic and stability analysis of this improved photovoltaic performance is attributed to the suitable wide-bandgap, low ETL/perovskite interface recombination, and interface stability by Mg2+ doping. Interestingly, the thermal stability analysis of the unencapsulated AI-PSCs maintains >95% of initial PCE more than 400 h at 85 °C for MgZnO ETL, revealing the suitability against thermal degradation than conventional ZnO ETL. |
