| 초록 |
Up to now, wet and dry ArF (193 nm) lithography have been powerful processes and the materials also have been developed in accordance with the required conditions. The limitation of ArF is overcome by the introduction of the liquid layer of high refractive index, thus making the wavelength shorter. However, for the smaller dimension of patterns, extreme ultraviolet (13.4 nm) is thought to be a candidate for applicable light source in sub-20 nm lithography and the molecular resists become alternatives for the polymer resists. To get the smaller and more uniform patterns in EUVL, the new concept of material is required. Herein, novel PAG bound molecular resists have been designed and synthesized based on the calix[n]arene and the phenyl sulfonates are introduced as PAG functionality which is known to be chemically decomposed to generate acids under exposure of EUV. The EUV exposure study for the synthesized PAG bound molecular resists will be presented. |
