| 학회 |
한국재료학회 |
| 학술대회 |
2020년 가을 (11/18 ~ 11/20, 휘닉스 제주 섭지코지) |
| 권호 |
26권 1호 |
| 발표분야 |
F. 광기능/디스플레이 재료 분과 |
| 제목 |
Effect of low-temperature buffer layer for growth GaN rods on patterned sapphire substrate |
| 초록 |
Process method growth of GaN rods has been fabricated on the patterned sapphire so as to implement Micro-LED. In order to form a rod, vertical growth of GaN is important, therefore it is advantageous to fabricate with N-face. This growth behavior is determined by the surface face and it can be controlled according to the buffer. It is known that AlN is Ga-Face, on the contrary, N-Face is determined by nitrided LT-GaN. Therefore, our research team determined occurred phenomenon when employed low temperature GaN buffer (LT GaN buffer) instead of AlN buffer in this study. In order to deposit N-face GaN rods, it consists of SiO2(thickness; 100nm) that prevent side growth of PSS(Patterned Sapphire Silicon) using PECVD. And then Etching is performed to reveal the top of the PSS in which is used by nucleation region of GaN. As a result of GaN growth with MOCVD, Ring-type pattern formation was observed inside the N-face GaN. we find out that it is originated due to interface SiO2 and PSS. |
| 저자 |
김효종, 정우섭, 조승희, 안민주, 심규연, 강성호, 변동진
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| 소속 |
고려대 |
| 키워드 |
<P>LED; Micro LED; GaN rod; MOCVD; Epitaxial Growth; LT GaN buffer layer </P>
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| E-Mail |
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