| 초록 |
Nickel sulfide (NiS) has been utilized in optoelectronic applications, such as transformation-toughening agent for materials used in semiconductor applications, catalysts, and cathodic materials in rechargeable lithium batteries. Recently, nickel sulfide thin films have been explored by various methods such as solution process and CVD technique. In most cases, hydrogen sulfide (H2S) gas or extra sulfur source have been used to prepare NiS films or particles. Suitable precursors are needed to deposit high quality thin films of metal sulfides by CVD technique, in which toxic H2S gas has been generally used. However, nickel sulfide precursors available for CVD process are very limited to nickel complexes with dithiocarbamate and alkanethiolate ligands. Therefore, it is important to prepare a novel NiS precursor suitable for CVD process. Herein we report on the synthesis of a new volatile nickel complex with aminothiolate ligands. Furthermore, the single molecular precursor has been employed to prepare thin films of NiS on silicon oxide substrates by spin-coating. The novel Ni complex and NiS thin films prepared have been characterized by various analytical techniques. |
