| 초록 |
In1-xGaxP quantum dots (QDs) have become alternative materials to InP QDs because of large bandgap tunability and persistent effort has focused on the synthesis of In1-xGaxP QDs with various methods. However, reported In1-xGaxP QDs don’t show poorer optical/electronic properties than cadmium-based QDs as CdSe QDs. To surmount this challenge, herein, we report homogeneous alloy In1-xGaxP QD synthesis through In3+-to-Ga3+ cation exchange reactions with thermal annealing. In3+-to-Ga3+ cation exchange and thermal annealing can derive homogeneous alloying of In1-xGaxP QDs by inter-diffusion between In3+ and Ga3+. Homogeneous alloyed In1-xGaxP QDs have larger energy bandgap and shorter full-width-half-maximum (FWHM) in photoluminescence spectrum with Zn-chalcogenide shelling. In this work, homogeneous alloyed In1-xGaxP cores exhibit 445 nm of 1S peak wavelength and PL quantum yield and 41 nm of FWHM. |
