| 초록 |
This paper presents a novel fabrication method of dielectric masks for high-power laser ablation. Existing wet etching-based fabrication methods have been limited to thin film design with less than 1um due to the limitation of etch selectivity between dielectric materials and resist, and high fabrication cost. In this study, the dielectric film was designed to have a thickness of about 2.9 μm (1064 nm wavelength, 99.1%) by electron beam evaporation with a lower process temperature. After optimizing the dose and development conditions for a negative resist having high temperature heat resistance (180 ℃), the lift-off conditions were optimized. In this paper, we demonstrated precise patterning with high fidelity, minimum line width of 10 μm, and 3 σ CD uniformity of 0.33 μm. Finally, the fabricated photomask was mounted on the laser projection system, and then the Ag nanowires coated on the PET substrate were patterned. At this time, a high productivity linear beam scan pattern was performed by converting the Gaussian type beam from the laser source into a flat top type. We obtained processing results that depend on the precision pattern performance of the dielectric mask even in the low cost configuration of the laser system. In conclusion, the lift-off fabrication can contribute to reducing the cost of laser equipment. It is expected that the securing of precision patterning technology for dielectric masks can replace contact/proximity photolithography in the existing micro-patterning market. |
