| 초록 |
Recently, there have been increasing interests in all organic transistor which can be used as a drive system of flexible and transparent electronic system such as active-matrix of LCD, E-paper. We successfully fabricated All-polymer FET (field effect transistor) by our photolithographic patterning technique of electrically conducting polypyrrole (PPy) or poly(3,4-ethylenedioxythiophene) (PEDOT) which involves no printing of a conducting polymer. The All-polymer FET (field effect transistor) whose substrate, insulating layer, active layer, and electrodes were composed of the organic polymeric materials, thus the device showed fairly high transmittance, flexibility and good electrical contact. The FETs were fabricated at room temperature as the following procedure applying the patterning method. The rectangular gate electrode was first formed on a plastic substrate by patterning of electrically conducting polymers. Transparent photocrosslinkable polymers such as poly(vinyl cinnamate) or epoxy/MMA polymers as insulating layer were spin-coated on the top of the gate electrode. Another narrow line electrically conducting pattern working as not only source-drain electrodes but also active layer was formed on the top of the insulating layer in the perpendicular direction to the gate electrode. We found that p-type FETs work in a depletion mode upon applying positive gate voltage. We estimated on/off ratio, and trans-conductance by measurement of the drain-source current as a function of gate bias. The response time is relatively slow, suggesting that ionic motion is involved in the phenomenon. |
