| 초록 |
We present a new technique to fabricate a highly ordered silicon pin-in-a-hole structure, in which each silicon nanowire is pinned in a hole, by combining polymer sphere arrays induced by Rayleigh instability with chemical etching process. With this process, we were able to create the novel sructures that are periodic over large areas (3 x 3 cm2), where the length of silicon nanowires can be varied by tuning the etching time. A silicon pin-in-a-hole structure was used as templates for preparing polymer nanotubes. And also these structures exhibited a superior anti-reflection property showing specular reflectance of about 0.2%, nearly three orders of magnitude lower than that of a planar silicon wafer. |
