| 초록 |
In this study, we investigated the long-term air-stability of top-gate printed electrolyte-gated transistors (EGTs) based on ion-gel insulator, and took into account a verity of strategies to improve them. In particular, we will emphasize the role of ion-gel as a buffer to improve air-stability of the device. Ion-gel showed excellent printability, mechanical robustness, and orthogonality to many organic semiconductors, thereby leading to successful demonstration of top-gate printed EGT on the flexible substrate. In addition, high capacitance of ion gel could demonstrate low voltage operation of several EGT-based devices. Therefore, the air-stability of EGTs must be the challenge to enhance the scalability of the EGTs in the electronic market. |
