| 학회 | 한국재료학회 |
| 학술대회 | 2018년 봄 (05/16 ~ 05/18, 삼척 쏠비치 호텔&리조트) |
| 권호 | 24권 1호 |
| 발표분야 | G. 나노/박막 재료 분과 |
| 제목 | GaN epitaxial growth using Ion implantaion process on Patterned Sapphire Substrate. |
| 초록 | Gallium nitride (GaN) film is commonly used in various devices such as light emitting diodes (LEDs), laser diodes(LDs). In LEDs devices, GaN film is important role in improving luminous efficiency. The epitaxial GaN film were grown by using metal organic chemical vapor deposition(MOCVD) on sapphire. To increase external luminous efficiency, patterned sapphire substrate(PSS) has been used by a scattering effect. However, It has difficult problem to grow the GaN film on PSS due to large lattice mismatch and thermal expansion coefficient difference. During the growth of GaN, polygrains grow in various directions on the PSS head. Then problems such as threading dislocations(TDDs) and misfits generate in GaN film. To reduce the TDDs and increase the light extraction efficiency, ion implantation process applied to the PSS. We introduce a new approach to epitaxial lateral overgrowth(ELOG) of high quality GaN film on PSS by applying the ion implantation for selective area growth(SAG). The selective ion implantation process is an effective pre-treatment to grow the improved quality GaN film on PSS. |
| 저자 | 이두원, 정우섭, 조승희, 고현아, 안민주, 심규연, 변동진 |
| 소속 | 고려대 |
| 키워드 | GaN; epitaxial growth; ion implantation |
