| 학회 |
한국재료학회 |
| 학술대회 |
2018년 가을 (11/07 ~ 11/09, 여수 디오션리조트) |
| 권호 |
24권 2호 |
| 발표분야 |
H. 한-일 재료공학(KJMST 2018) |
| 제목 |
Temperature Dependence of ZnO Growth Mechanism on Si(100) Substrate by Atomic Layer Deposition |
| 초록 |
Zinc oxide (ZnO) growth mechanism by atomic layer deposition (ALD) on Si (100) substrate were investigated. The ALD mechanism was determined using each substrate orientation and temperature dependent deposition rate. ZnO deposited temperature was confirmed as 75 ℃ ~ 150 ℃ and growth per cycle (GPC) was as 1.0 Å ~ 2.0 Å. The preferred orientation was changed from (002) to (100) with increasing temperature. The changed preferred orientation was related the grain sizes, residual and thermal stress. Using X-ray diffraction data was calculated grain sizes and Lotgering factor. The properties of ZnO thin films were investigated using field emission scanning electron microscope (Fe-SEM) and X-ray diffraction (XRD).
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| 저자 |
Seunghee Cho, Woo seop Jeong, Hyun-A Ko, Doo Won Lee, Min Joo Ahn, Kyu Yeon Shim, Seong Ho Kang, Dongjin Byun
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| 소속 |
Korea Univ. |
| 키워드 |
ZnO; ALD; Lotgering factor
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| E-Mail |
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