| 초록 |
Organic-inorganic perovskite have attracted due to its high light absorption, excellent semiconductor nature and long diffusion length in photovoltaic field. Although mesostructural devices showed higher performance than planar structural devices, mp-TiO2 requires high temperature (＞450oC). It is not suitable for large-scale production. Despite use of low temperature processed N-type materials, ZnO could still induce severe degradation of perovskite and device with doped TiO2 showed large hysteresis. So, Low temperature solution processed PCBM has universally been used as N-type materials in P-I-N p-PeSCs using solugion process under low temperature. Here, we investigated properties of N-I-P p-PeSCs (ITO/PCBM/MAPbI3/Hole trasporting layer/metal) by combining PCBM doping and various hole transporting layers to confirm the compatibility of PCBM in N-I-P p-PeSCs. We will discuss changed properties of devices based on th function of hole transporting layaer. |
