| 초록 |
Noticeable advances in the performances of organic field-effect transistors in recent year. However, the charge traps related to microstructural origins inside OFET devices are not yet clearly understood, and revealing these origins presents an important issue. Here, we investigated the charge trapping and bias stress stability in Poly(3-hexylthiophene-2,5-diyl)(P3HT) and P3HT random copolymer with 33% ratio of non-alkyl thiophene moieties(RP33) which have low crystallinity, but, high charge carrier mobility by increasing localized π-orbital overlapping between localized aggregate parts. Although, the charge carrier mobility of RP33 were higher than that of P3HT, the bias stress stability of RP33 were lower than that of P3HT. Further experimental evidence by using spectroscopy methods suggest that although, RP33 have low deep trap density, the non-alkyl thiophene moieties in RP33 induce shallow trap and decrease bias stress stability during prolonged bias. |
