| 초록 |
Organic semiconducting materials compatible with solution processing techniques can eliminate the need for expensive lithography and vacuum deposition steps necessary for silicon-based materials. Solution processing also allows flexible plastics or fabrics to be used in conjunction with methods such as spin-coating, stamping, or ink-jet printing. Here, we report the synthesis and characterization of new fullerene derivatives for n-type organic field-effect transistors (OFETs). The materials were prepared by Prato reaction which provides better product yields and purity compared with the reaction for the synthesis of [60]methanofullerene analogues. They show good thermal properties and n-channel characteristics with a maximum mobility of 0.028 cm2/Vs |
