| 초록 |
Light emitting diodes (LEDs) are widely used as lighting devices to replace incandescent lamps because of their high efficiency, long life and environmental friendliness. Through the developing the LEDs based GaN with AlN buffer layer, many researchers experiment to invent the high quality of LEDs. In this study, the quality of GaN epitaxial growth was analyzed by AlN deposition temperature conditions used as a buffer layer. As an experimental method, we deposited the AlN buffer layer on the patterned sapphire substrate by the sputter by the difference of temperature. After that, we deposited the GaN layer by the metal-organic chemical vapor deposition(MOCVD). We analyzed this experiment result with scanning electron microscope (SEM), x-ray diffraction, raman spectroscopy and photoluminescence spectroscopy. This work was supported by the Technology Innovation Program (10067492) funded by the Ministry of Trade, Industry & Energy (MOTIE, Korea). |
