| 학회 |
한국재료학회 |
| 학술대회 |
2019년 봄 (05/15 ~ 05/17, 평창 알펜시아 리조트) |
| 권호 |
25권 1호 |
| 발표분야 |
G. 나노/박막 재료 분과 |
| 제목 |
GaN Template Fabrication on Patterned Sapphire Substrate Using SOG Mask |
| 초록 |
Many researchers have been focusing on increasing the efficiency of GaN-based light emitting diodes(LEDs). In recent years, LED devices with air voids have gained much attention. The light reaching the planar surface with incident angle larger than critical angle will not emit to the air but will experience total internal reflection and continues to be reflected within the LED until it gets absorbed. Therfore improving light extraction efficiency(LEE) has become the issue of LED researches. LEE of LED structure with air void can be increased due to the nonplanar interfaces between patterned sapphire substrate(PSS) and GaN layer. In this work, the GaN templates were fabricated by suppressing lateral growth on c-plane using spin-on-glass(SOG) material as a mask. PSS was polished until flat-top regions were formed and the growth of GaN epi-layer took place in metal organic chemical vapor deposition(MOCVD) reactor. Aluminium nitride(AlN) buffer layers were prepared in sputtering system. The morphology and crystallinity of GaN templates were characterized by scanning electron microscopy(SEM) and x-ray diffraction(XRD). This work was supported by the Technology Innovation Program (10067492) funded by th Ministry of Trade, Industry & Energy (MOTIE, Korea). |
| 저자 |
심규연, 정우섭, 조승희, 이두원, 안민주, 강성호, 변동진
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| 소속 |
고려대 |
| 키워드 |
GaN; PSS; SOG; AlN
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| E-Mail |
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