| 학회 |
한국재료학회 |
| 학술대회 |
2019년 봄 (05/15 ~ 05/17, 평창 알펜시아 리조트) |
| 권호 |
25권 1호 |
| 발표분야 |
A. 전자/반도체 재료 분과 |
| 제목 |
Plasma Enhanced Atomic Layer Deposited Silicon dioxide with divalent Si precursor [N, N'-tert-butyl 1, 1 dimethylethylenediamine silylene] |
| 초록 |
SiO2 thin films were successfully deposited by plasma-enhanced atomic layer deposition (PEALD) using a divalent Si precursor (N,N’-tert-butyl-1,1-dimethylethylenediamine silylene) and oxygen plasma as reactants. The growth behavior of SiOx exhibited the typical self-limiting surface reaction depending on the precursor dose and plasma time over a wide deposition temperature range (80–200 °C) of the ALD window, showing a growth rate of about 1 Å/cycle. The properties of the SiOx thin films were investigated using various analysis tools. The films exhibited a refractive index value of about 1.45–1.5, which corresponds to the refractive index of SiO2. The dielectric property was evaluated, and a high break down voltage and low leakage current was observed owing to the absence of carbon or nitrogen impurities. The density functional theory (DFT) was used to determine the growth mechanism during the ALD growth sequence. |
| 저자 |
이정훈, 이승환, 김혜미, 박진성
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| 소속 |
한양대 |
| 키워드 |
atomic layer deposition; density functional thoery; divalent precursor
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| E-Mail |
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