| 학회 |
한국재료학회 |
| 학술대회 |
2019년 봄 (05/15 ~ 05/17, 평창 알펜시아 리조트) |
| 권호 |
25권 1호 |
| 발표분야 |
G. 나노/박막 재료 분과 |
| 제목 |
Surfactant-Assisted Wafer-Scale Growth of High Quality Tungsten Disulfides using Metal-Organic Chemical Vapor Deposition |
| 초록 |
Atomically thin transition metal dichalcogenides (TMDs) have recently attracted tremendous scientific and technological interests as an emerging semiconductor because of their exceptional electrical and optical properties. For practical device applications, the wafer-scale and uniform growth of TMDs with large grain sizes is surely required. In this research, we will present the wafer-scale growth of monolayer tungsten disulfides (WS2) using metal-organic chemical vapor deposition(MOCVD). By optimizing the growth conditions such as temperature, pressure and molar ratio of precursors, first of all, monolayer WS2 was grown uniformly on 2-inch SiO2/Si wafer. We investigated the optical properties of MOCVD-grown thin films using photoluminescence and Raman spectroscopy, exhibiting high optical quality comparable to that of the exfoliated single crystal counterpart. To further improve the quality of WS2 thin films, the spin-coated NaCl was employed as a surfactant during the MOCVD growth. We found that the NaCl-assisted WS2 films had much larger grain sizes and improved optical characteristics than those of normally-grown films. This is presumably due to suppressed nucleation and promoted lateral crystal growth aided by the surfactant. The detailed growth mechanism and the role of NaCl are still under investigation. |
| 저자 |
Do Hyoung Koo1, Hee Seong Kang2, Chul-Ho Lee3
|
| 소속 |
1KU-KIST Graduate School of Converging Science and Technology, 2Korea Univ., 3Seoul |
| 키워드 |
MOCVD; TMD; WS2
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| E-Mail |
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