| 학회 | 한국재료학회 |
| 학술대회 | 2020년 가을 (11/18 ~ 11/20, 휘닉스 제주 섭지코지) |
| 권호 | 26권 1호 |
| 발표분야 | D. 구조 재료 분과 |
| 제목 | Synthesis of iodine substituted Silicon Carbide by high temperature and pressure reaction process and properties characterization |
| 초록 | The properties for SiC are excellent in strength, abrasion resistance. and chemically stable up to 1600℃ and high electric, thermal conductivity material. It is also a highly corrosion resistant material, resistant to acids and alkalis. By utilizing these characteristics, It is currently used for electronic materials, next-generation semiconductors, automobiles, and machine parts. In addition, SiC is also used as a heating element, which is used by raising the temperature by directly applying electrical energy. In this study, microwave was irradiated to SiC-I2 with polarization difference, not SiC heating element to apply electric energy, in order to extend the utilization range of SiC heating element. In this experiment, chlorine was removed from the starting material, Dimethyldichlorosilane, and I2 was added in the washing process, and I2 was added to the polydimethylsilane. At this time, Iodine was added 1 wt% DMDCS and 2, 1 wt% was added to PDMS to prepare PCS-I2. After synthesis, uniaxial pressure molding was performed, and the formed PCS-I2 was cured in air to form crosslinks. The cross-linked specimen was heat-treated in an inert gas atmosphere to finally prepare a SiC-I2 heating element. Chain structure and Iodine substitution was confirmed using FT-IR and UV-Visible, and the structure of the prepared SiC-I2 heating element was confirmed using XRD. The exothermic characteristics were measured by using a pyrometer after irradiating microwave for 1 minute in the 2.45GHz region. |
| 저자 | 이나영, 고명석, 김택남 |
| 소속 | 배재대 |
| 키워드 | Silicon Carbide; Iodine; Polarization; Microwave |
