| 학회 |
한국고분자학회 |
| 학술대회 |
2013년 봄 (04/11 ~ 04/12, 대전컨벤션센터) |
| 권호 |
38권 1호 |
| 발표분야 |
박리그래핀 제조 및 소자 응용기술 |
| 제목 |
Simple preparation of simultaneously boron doped and reduced graphene oxides by thermal annealing and their electrical properties |
| 초록 |
We demonstrated a simple chemical method to obtain bulk quantities of boron doped and reduced graphene oxide through thermal annealing of graphene oxide with boron oxide. The thermal treatment successfully reduced the graphene oxide and substituted the carbon with boron at the same time. XPS data show that the amount of boron increases as the annealing temperature increases, implying the improvement of boron-doping level with higher annealing temperature. Also, the shifts of C(1s) peak and G band from Raman analysis after boron doping indicate that this reaction is substitutional doping. The electrical properties of boron doped and reduced graphene oxide were characterized by four-point probe and I-V measurement. They show that the electrical conductivity of boron doped and reduced graphene oxide is 4400 S/m while that of thermally reduced graphene oxide without boron doping is 500 S/m, indicating that boron doping in addition to thermal reduction improves the electrical conductivity. |
| 저자 |
염다영1, 전우진1, 임정아1, 이상수1, 성봉준2, 김희숙1
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| 소속 |
1한국과학기술(연), 2서강대 |
| 키워드 |
graphene; doping
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| E-Mail |
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