| 초록 |
Graphene has unique physical and electrical properties. There is currently interest in taking advantages of these properties for future electronic applications. In this talk, I first demonstrate the field-effect transistor (FET) characteristics and photoelectric properties of graphene nanoribbon (GNR) arrays having 9–12 nm ribbon widths which were fabricated using a cylindrical PS-b-PDMS block copolymer as a lithographic mask to pattern graphene monolayer sheets grown by chemical vapor deposition and transferred onto heavily p-doped Si substrates coated with a 300 nm-thick SiO2 layer. GNR array FETs exhibited higher on/off ratio and photocurrent when compared to pristine graphene FETs. Next, I present a modified chemical vapor deposition technique for the production of large-area, high-quality continuous monolayer graphene films from benzene on Cu at 100–300 °C at ambient pressure. In this method, we extended the graphene growth step in the absence of residual oxidizing species by introducing pumping and purging cycles prior to growth. Using this method, the graphene was directly grown on Cu interconnects, and the Cu/graphene interconnects showed the improved electrical properties compared to bare Cu interconnects. |
