| 학회 |
한국재료학회 |
| 학술대회 |
2010년 봄 (05/13 ~ 05/14, 삼척 팰리스 호텔) |
| 권호 |
16권 1호 |
| 발표분야 |
G. Display (LCD, PDP, OLED) Materials(디스플레이 재료) |
| 제목 |
Solution-processed Oxide Thin Film Transistors on Flexible substrate |
| 초록 |
We demonstrate thin-film transistors (TFTs) using transparent soluble material fabricated on flexible substrates such as polyimide (PI). The solution processed semiconductor was prepared by spin-coating on the gate dielectric such as silicon dioxide (SiO2). The use of aqueous zinc precursor allows us to fabricate the TFTs at low temperatures range from 150 oC to 300 oC with compatibility and flexibility. In the case of PI flexible substrate, the soluble processed ZnO-TFTs showed good performance such as low off-current of the order of ＜ 10-11 A (an on-off current ratio of ~ 106), a field effect mobility of 3.5 10-1 cm2 V-1 s-1, threshold gate voltage (~ + 6.7 V), and low gate leakage current (the order of ＜ 10-12 A). In addition, the output characteristic of ZnO-TFT based on PI substrate exhibits good contact performance at low drain voltages and clear pinch-off behavior. We analyzed the cross-sectional structure of the devices and semiconductor using high resolution transmission electron microscopy (HRTEM) and X-ray diffraction profile (XRD), and the electrical parameters of soluble ZnO-TFTs were measured in air by a semiconductor parameter analyzer. Special emphasis was directed on the repeated bending tests. Our results suggest that the solution-processed devices on various flexible substrates have great potential to work as a building block for future flexible transparent electronics. |
| 저자 |
송근규1, 노정훈2, 정양호1, 전태환1, 정영민1, 구창영1, 김아름1, 우규희1, 김영우1, 문주호1
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| 소속 |
1연세대, 2삼성전자 LCD(연) |
| 키워드 |
ZnO; flexible; plastic; TFT; transparent
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| E-Mail |
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