| 학회 |
한국고분자학회 |
| 학술대회 |
2018년 봄 (04/04 ~ 04/06, 대전컨벤션센터) |
| 권호 |
43권 1호 |
| 발표분야 |
고분자구조 및 물성 |
| 제목 |
Study of interfacial roughness in EUV photoresist from a molecular approach |
| 초록 |
One of the most challenging issues in developing sub-10nm EUV (extreme ultra violet) lithography is reducing the roughness in the patterns while maintaining high resolution and sensitivity upon light exposure. Previous studies have focused on photon shot noise and electron blur from photochemistry as main sources of the roughness in EUV lithography, thus stochastic modeling was the main approach to simulate EUV resist. However, stochastic model, which is derived from a continuum based approach without explicit description of polymer chains, cannot explain physical phenomena. As the desired pattern size and roughness is compatible to the molecular size of polymer chains, it is important to develop a resist model and interpret the roughness of pattern from a perspective of molecular aspect. We present our new approach in modeling EUV resist and show simulation results investigating the width, chain conformation and orientation at the interface between the exposed and unexposed area. |
| 저자 |
박주혜1, 이성규2, 김명웅3, Yannick Vesters4, 오혜근2, Danilo De Simone4, 허수미1
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| 소속 |
1전남대, 2한양대, 3인하대, 4IMEC |
| 키워드 |
EUV (extreme ultra violet) resist; interfacial roughness; molecular simulation; polymer conformations
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| E-Mail |
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