| 학회 |
한국공업화학회 |
| 학술대회 |
2015년 가을 (11/04 ~ 11/06, 제주국제컨벤션센터(ICCJEJU)) |
| 권호 |
19권 2호 |
| 발표분야 |
나노_포스터 |
| 제목 |
Narrow gap filling in 25 nm shallow trench isolation using highly porous organosilica |
| 초록 |
Highly porous organosilica (POS) in shallow, 25-nm-wide trenches of a patterned wafer was synthesized by vapor-phase synthesis using dual surfactant solution and vaporized precursors. Cetyltrimethylammonium bromide and nonionic triblock copolymers were employed as a structure-directing agent in the surfactant solution. Two precursors including tetraethyl orthosilicate (TEOS) with bis(trimethoxysilyl)ethane (BTSE) were diffused and hydrolyzed at the surfactant solution. The vaporized precursors were continuously supplied during condensation of organosilica by a nonvolatile catalyst. This process provides the minimized shrinkage compared with conventional sol–gel reaction during condensation reaction. The mechanical properties of the organosilica were improved by crosslinking of TEOS and BTSE. Synthesized POS had a pore size of 4.67nm, a Young'smodulus of 5.20 GPa and a dielectric constant of 1.65. |
| 저자 |
장정식1, 오현택2, LEE JAMES SANGMIN1
|
| 소속 |
1서울대, 2LG chem |
| 키워드 |
Gap filling; Organosilica
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| E-Mail |
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