| 초록 |
1-D nanostructures of various metal oxide(MO) have attracted enormous attention because it is essential for nano-scale transparent opto-electronics. Here we fabricated lateral aligned inorganic nanowire(NW) transistors using highly aligned ZnO, IZO and IGZO NWs, which was fabricated using high-speed electrohydrodynamic nanowire printing (ENP). With ENP, MO NWs can be aligned on the device substrate in a direct, continuous, and controllable manner. We investigated the MO NW properties and improved the performance of MO NW transistors by adding the MO nanoparticle additive. Also, we can fabricate the high performance all NW transistors consist of MO NWs. We believe that our approach to generate controlled MO NWs will be a promising strategy in the field of flexible and transparent nano-electronics. |
