| 학회 | 한국재료학회 |
| 학술대회 | 2016년 가을 (11/16 ~ 11/18, 경주 현대호텔) |
| 권호 | 22권 2호 |
| 발표분야 | A. 전자/반도체 재료 분과 |
| 제목 | Properties of AZO thin film fabricated in varying temperature condition by using RF magnetron sputtering system. |
| 초록 | Indium-tin oxide thin films prepared by magnetron sputtering deposition are currently in practical use for most transparent electrode application such as thin film solar cells, flat-panel displays and light emitting diodes etc. However, transparent conducting oxides(TCOs) that contain a reduced amount or no indium have recently attracted much attention as substitute materials for ITO transparent electrode application because of the cost and scarcity of indium, the principal material of ITO[1]. Among alternative technologies, Al-doped ZnO films have been studied extensively because of their good optical characteristics, excellent electrical properties and low material cost. Al-dopted ZnO film exhibits a wide band gap of 3.37~, high transparency, low resistivity, non-toxicity, low cost of fabrication[2]. Transparent conductive Al-doped(3 wt%) Zinc oxide (AZO) films were deposited on soda-lime glass substrate by using RF magnetron sputtering. In this study, We analyzed the effects of substrate temperature which varied in the range from 150~250oC substrate temperature on the morphological electrical and optical properties of AZO films. Reference : [1] T. Minami, MRS Bull. 25 (2000) 38. [2] Hao XT, Ma J, Zhang DH, Yang YG, Ma HL, Cheng CF, et al. Materials Science and Engineering B (2002) 90:50-4. |
| 저자 | Jeon Ryang Lee1, Hak-Jun Chung2 |
| 소속 | 1IT application Research Center, 2Korea Electronic Technology Institute |
| 키워드 | AZO; RF magnetron sputtering; TCO |
