화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Recent achievements and future challenges in SiC homoepitaxial growth
Kimoto T, Nakazawa S, Fujihira K, Hirao T, Nakamura S, Chen Y, Hashimoto K, Matsunami H
Materials Science Forum, 389-3, 165, 2002
2 Fast epitaxial growth of 4H-SiC by chimney-type hot-wall CVD
Fujihira K, Kimoto T, Matsunami H
Materials Science Forum, 389-3, 175, 2002
3 Breakdown fields along various crystal orientations in 4H-, 6H- and 3C-SiC
Nakamura SI, Kumagai H, Kimoto T, Matsunami H
Materials Science Forum, 389-3, 651, 2002