검색결과 : 3건
No. | Article |
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1 |
Recent achievements and future challenges in SiC homoepitaxial growth Kimoto T, Nakazawa S, Fujihira K, Hirao T, Nakamura S, Chen Y, Hashimoto K, Matsunami H Materials Science Forum, 389-3, 165, 2002 |
2 |
Fast epitaxial growth of 4H-SiC by chimney-type hot-wall CVD Fujihira K, Kimoto T, Matsunami H Materials Science Forum, 389-3, 175, 2002 |
3 |
Breakdown fields along various crystal orientations in 4H-, 6H- and 3C-SiC Nakamura SI, Kumagai H, Kimoto T, Matsunami H Materials Science Forum, 389-3, 651, 2002 |