검색결과 : 16건
| No. | Article |
|---|---|
| 1 |
Surface modification of bulk n-InAs (111)A etched in bromine-methanol Eassa N, Betz R, Coetsee E, Swart HC, Venter A, Botha JR Current Applied Physics, 13(2), 366, 2013 |
| 2 |
Low temperature oxide desorption in GaAs (111)A substrates Fuster D, Gines L, Gonzalez Y, Herranz J, Gonzalez L Thin Solid Films, 537, 70, 2013 |
| 3 |
Ab initio-based approach to adsorption-desorption behavior on the InAs(1 1 1)A heteroepitaxially grown on GaAs substrate Ito T, Ishimure N, Akiyama T, Nakamura K Journal of Crystal Growth, 318(1), 72, 2011 |
| 4 |
An ab initio-based approach to adsorption-desorption behavior of Si adatoms on GaAs(111)A-(2 x 2) surfaces Tatematsu H, Akiyama T, Nakamura K, Ito T Applied Surface Science, 256(4), 1164, 2009 |
| 5 |
Stable reconstruction and adsorbates of InAs(111)A surface Taguchi A, Kanisawa K Applied Surface Science, 252(15), 5263, 2006 |
| 6 |
Infrared absorption and current-voltage characteristic of GaAs/AlGaAs multiple quantum wells on GaAs (111)A substrate grown by solid source molecular beam epitaxy Li H, Mei T, Zhang DH, Fan WJ, Yoon SF, Loke WK Journal of Crystal Growth, 288(1), 36, 2006 |
| 7 |
Mechanical and piezoresistive properties of InAs/AlGaSb cantilevers Yamaguchi H, Miyashita S, Hirayama Y Applied Surface Science, 237(1-4), 649, 2004 |
| 8 |
Fabrication and characterization of GaAs two-dimensional air-hole arrays on GaAs (111)A substrates using selective-area MOVPE Takeda J, Inari M, Motohisa J, Fukui T Journal of Crystal Growth, 272(1-4), 570, 2004 |
| 9 |
Core-level photoemission study of the Bi-GaAs(111) A interface McGinley C, Cafolla AA, McLoughlin E, Murphy B, Teehan D, Moriarty P, Woolf DA Applied Surface Science, 158(3-4), 292, 2000 |
| 10 |
Self-surfactant effect of As on a GaAs(111)A surface Taguchi A, Shiraishi K, Ito T Applied Surface Science, 162, 354, 2000 |