화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 FDSOI bottom MOSFETs stability versus top transistor thermal budget featuring 3D monolithic integration
Fenouillet-Beranger C, Previtali B, Batude P, Nemouchi F, Casse M, Garros X, Tosti L, Rambal N, Lafond D, Dansas H, Pasini L, Brunet L, Deprat F, Gregoire M, Mellier M, Vinet M
Solid-State Electronics, 113, 2, 2015
2 Influence of device architecture on junction leakage in low-temperature process FDSOI MOSFETs
Sklenard B, Batude P, Rafhay Q, Martin-Bragado I, Xu CQ, Previtali B, Colombeau B, Khaja FA, Cristoloveanu S, Rivallin P, Tavernier C, Poiroux T
Solid-State Electronics, 88, 9, 2013