| 1 |
A new high-kappa Al2O3 based metal-insulator-metal antifuse
Tian M, Zhong HC, Li L, Wang ZG
Solid-State Electronics, 144, 13, 2018 |
| 2 |
Improving Interface Characteristics of Al2O3-Based Metal-Insulator-Semiconductor(MIS) Diodes Using H2O Prepulse Treatment by Atomic Layer Deposition
Kim HY, Kim MS, Rye SY, Choi BJ
Korean Journal of Materials Research, 27(7), 362, 2017 |
| 3 |
A comparison of density of states between InGaZnO based TFTs and InZnO based TFTs
Huang CX, Li J, Zhu WQ, Zhang JH, Jiang XY, Zhang ZL
Molecular Crystals and Liquid Crystals, 651(1), 221, 2017 |
| 4 |
Fully low temperature interdigitated back-contacted c-Si(n) solar cells based on laser-doping from dielectric stacks
Ortega P, Lopez G, Munoz D, Martin I, Voz C, Molpeceres C, Alcubilla R
Solar Energy Materials and Solar Cells, 169, 107, 2017 |
| 5 |
Emitter formation using laser doping technique on n- and p-type c-Si substrates
Lopez G, Ortega P, Colina M, Voz C, Martin I, Morales-Vilches A, Orpella A, Alcubilla R
Applied Surface Science, 336, 182, 2015 |
| 6 |
Corrosion protection of silver coated reflectors by atomic layer deposited Al2O3
Fedel M, Zanella C, Rossi S, Deflorian F
Solar Energy, 101, 167, 2014 |
| 7 |
Characterization of enhancement-mode n-channel sulfur-treated InP MOSFET with Al2O3/TiO2 gate oxides prepared by atomic layer deposition
Yen CF, Lee MK
Solid-State Electronics, 100, 1, 2014 |
| 8 |
Interactions between tri-methylaluminum molecules and their effect on the reaction of tri-methylaluminum with an OH-terminated Si (001) surface
Kim DH, Baek SB, Seo HI, Kim YC
Applied Surface Science, 257(15), 6326, 2011 |
| 9 |
Proximity-Scan ALD (PS-ALD) 에 의한 Al2O3와 HfO2 박막증착 기술 및 박막의 전기적 특성
권용수, 이미영, 오재응
Korean Journal of Materials Research, 18(3), 148, 2008 |
