| 1 |
Integration of crystalline orientated gamma-Al2O3 films and complementary metal-oxide-semiconductor circuits on Si(100) substrate
Oishi K, Akai D, Ishida M
Solid-State Electronics, 103, 110, 2015 |
| 2 |
Effect of a Gradient Static Magnetic Field on an Unstirred Belousov-Zhabotinsky Reaction by Changing the Thickness of the Medium
Okano H, Kitahata H, Akai D
Journal of Physical Chemistry A, 113(13), 3061, 2009 |
| 3 |
Ferroelectric and pyroelectric properties of (Na0.5Bi0.5)TiO3-BaTiO3 based trilayered thin films
Guo YP, Li M, Zhao W, Akai D, Sawada K, Ishida M, Gu MY
Thin Solid Films, 517(9), 2974, 2009 |
| 4 |
Comparison of the growth behavior of gamma-Al2O3 thin films grown on Si (111) by molecular beam epitaxy using N2O and O-2
Ito M, Masunaga D, Akai D, Sawada K, Ishida M
Journal of Crystal Growth, 310(2), 372, 2008 |
| 5 |
Epitaxial growth of Pt(001) thin films on Si substrates using an epitaxial gamma-Al2O3(001) buffer layer
Akai D, Hirabayashi K, Yokawa M, Sawada K, Ishida M
Journal of Crystal Growth, 264(1-3), 463, 2004 |
| 6 |
Fabrication of Pb(Zr,Ti)O-3 films on epitaxial gamma-Al2O3(001)/Si(001) substrates
Akai D, Sawada K, Ishida M
Journal of Crystal Growth, 259(1-2), 90, 2003 |
