| 1 |
Selective area chemical vapor deposition of Si1-xGex thin film alloys by the alternating cyclic method: Experimental data I. Deposition parameters
Soman R, Reisman A, Temple D, Alberti R
Journal of the Electrochemical Society, 147(5), 1847, 2000 |
| 2 |
Selective area chemical vapor deposition of Si1-xGex thin film alloys by the alternating cyclic method: Experimental data II. Morphology and composition as a function of deposition parameters
Soman R, Reisman A, Temple D, Alberti R, Pace C
Journal of the Electrochemical Society, 147(5), 1854, 2000 |
| 3 |
Selective Epitaxial-Growth of Silicon by the AC Technique .1. Nonimplanted Substrate/Oxide Surfaces
Wang QS, Reisman A, Temple D, Alberti R
Journal of the Electrochemical Society, 142(7), 2438, 1995 |
| 4 |
Selective Epitaxial-Growth of Silicon by the AC Technique .2. Ion-Implanted Substrate/Oxide Surfaces
Wang QS, Reisman A, Temple D, Alberti R
Journal of the Electrochemical Society, 142(7), 2450, 1995 |
| 5 |
Selective Epitaxial-Growth of Silicon by the AC Technique .3. Lateral Overgrowth Structures
Wang QS, Reisman A, Temple D, Alberti R
Journal of the Electrochemical Society, 142(7), 2455, 1995 |
