검색결과 : 21건
| No. | Article |
|---|---|
| 1 |
Demonstration of the first SiC power integrated circuit Sheng K, Zhang YX, Su M, Zhao JH, Li XQ, Alexandrov P, Fursin L Solid-State Electronics, 52(10), 1636, 2008 |
| 2 |
High voltage (500V-14kV) 4H-SiC unipolar-bipolar Darlington transistors for high-power and high-temperature applications Zhao JH, Li X, Tone K, Alexandrov P, Fursin L, Carter J, Weiner M Materials Science Forum, 457-460, 957, 2004 |
| 3 |
2.5KV-30A inductively loaded half-bridge inverter switching using 4H-SiC MPS free-wheeling diodes Li Y, Fursin L, Wu J, Alexandrov P, Zhao JH Materials Science Forum, 457-460, 1097, 2004 |
| 4 |
4,308V, 20.9 m Omega center dot cm(2) 4H-SiC MPS diodes based on a 30 mu m drift layer Wu J, Fursin L, Li Y, Alexandrov P, Zhao JH Materials Science Forum, 457-460, 1109, 2004 |
| 5 |
The first 4H-SiC BJT-based 20 kHz, 7HP PWM DC-to-AC inverter for induction motor control applications Zhao JH, Zhang J, Luo Y, Hu X, Li Y, Yu H, Lai J, Alexandrov P, Fursin L, Li X, Carter J, Weiner M Materials Science Forum, 457-460, 1137, 2004 |
| 6 |
High power(500V-70A) and high gain(44-47) 4H-SiC bipolar junction transistors Zhang J, Alexandrov P, Zhao JH Materials Science Forum, 457-460, 1149, 2004 |
| 7 |
4,340V, 40 m Omega cm(2) normally-off 4H-SiC VJFET Zhao JH, Fursin L, Alexandrov P, Li X, Weiner M Materials Science Forum, 457-460, 1161, 2004 |
| 8 |
A 500V, very high current gain (beta=1517) 4H-SiC bipolar Darlington transistor Zhang J, Alexandrov P, Zhao JH Materials Science Forum, 457-460, 1165, 2004 |
| 9 |
A high voltage (1570V) 4H-SiC bipolar Darlington with current gain beta > 640 and tested in a half-bridge inverter up to 20A at V-Bus=900V Zhao JH, Zhang J, Alexandrov P, Burke T Materials Science Forum, 457-460, 1169, 2004 |
| 10 |
A high voltage (1,750V) and high current gain (beta=24.8) 4H-SiC bipolar junction transistor using a thin (12 mu m) drift layer Zhao JH, Zhang J, Alexandrov P, Li X, Burke T Materials Science Forum, 457-460, 1173, 2004 |