검색결과 : 20건
| No. | Article |
|---|---|
| 1 |
Interfacial layers in Ta2O5 based stacks and constituent depth profiles by spectroscopic ellipsometry Karmakov Y, Paskaleva A, Atanassova E Applied Surface Science, 258(10), 4507, 2012 |
| 2 |
Structural and dielectric properties of Ru-based gate/Hf-doped Ta2O5 stacks Paskaleva A, Tapajna M, Dobrocka E, Husekova K, Atanassova E, Frohlich K Applied Surface Science, 257(17), 7876, 2011 |
| 3 |
Charge trapping during constant current stress in Hf-doped Ta2O5 films sputtered on nitrided Si Novkovski N, Atanassova E Thin Solid Films, 519(7), 2262, 2011 |
| 4 |
Conducting and topographic AFM analysis of Hf-doped and Al-doped Ta2O5 films Atanassova E, Lytvyn P, Konakova RV, Mitin VF, Spassov D Thin Solid Films, 519(22), 8182, 2011 |
| 5 |
Spectroscopic ellipsometry of very thin tantalum pentoxide on Si Karmakov I, Konova A, Atanassova E, Paskaleva A Applied Surface Science, 255(22), 9211, 2009 |
| 6 |
Effect of Ti doping on Ta2O5 stacks with Ru and Al gates Paskaleva A, Tapajna M, Atanassova E, Frohlich K, Vincze A, Dobrocka E Applied Surface Science, 254(18), 5879, 2008 |
| 7 |
Electrical characteristics of Ti-doped Ta2O5 stacked capacitors Atanassova E, Spassov D, Paskaleva A, Georgieva M, Kopninarova J Thin Solid Films, 516(23), 8684, 2008 |
| 8 |
Stress-induced leakage currents of the RF sputtered Ta2O5 on N-implanted silicon Novkovski N, Atanassova E, Paskaleva A Applied Surface Science, 253(9), 4396, 2007 |
| 9 |
Wear-out of Al-Ta2O5/SiO2-Si structures under dynamic stress Novkovski N, Atanassova E Applied Surface Science, 252(10), 3833, 2006 |
| 10 |
Composition of Ta2O5 stacked films on N2O- and NH3-nitrided Si Atanassova E, Spassov D, Paskaleva A, Kostov K Applied Surface Science, 253(5), 2841, 2006 |