| 1 |
Optimization of SiGe bandgap-based circuits for up to 300 degrees C operation
Thomas DB, Najafizadeh L, Cressler JD, Moen KA, Lourenco N
Solid-State Electronics, 56(1), 47, 2011 |
| 2 |
Design considerations for integration of Horizontal Current Bipolar Transistor (HCBT) with 0.18 mu m bulk CMOS technology
Koricic M, Suligoj T, Mochizuki H, Morita S, Shinomura K, Imai H
Solid-State Electronics, 54(10), 1166, 2010 |
| 3 |
Voltage-controlled multiple-valued logic design using negative differential resistance devices
Gan KJ, Tsai CS, Chen YW, Yeh WK
Solid-State Electronics, 54(12), 1637, 2010 |
| 4 |
Si1-xGex growth using Si3H8 by low temperature chemical vapor deposition
Takeuchi S, Nguyen ND, Goosens J, Caymax M, Loo R
Thin Solid Films, 518, S18, 2010 |
| 5 |
Parasitic electrostatic capacitance of high-speed SiGe Heterojunction Bipolar Transistors
Zerounian N, Aniel F, Barbalat B, Chevalier P, Chantre A
Solid-State Electronics, 53(5), 483, 2009 |
| 6 |
The physical origins of mismatch in Si/SiGe : C heterojunction bipolar transistors for BiCMOS technologies
Danaie S, Marin M, Ghibaudo G
Solid-State Electronics, 52(2), 323, 2008 |
| 7 |
High power density, high efficiency 1 W SiGe power HBT for 2.4 GHz power amplifier applications
Yeh PC, Chiou HK, Lee CY, Yeh J, Tsai YH, Tang D, Chern J
Solid-State Electronics, 52(5), 745, 2008 |
| 8 |
Impact of emitter fabrication on the yield of SiGe HBTs
Heinemann B, Rucker H, Tillack B
Thin Solid Films, 517(1), 71, 2008 |
| 9 |
Design and optimization of a buried channel PMOS integrable in a Si1-xGexBiCMOS process
Khare P, Schroder D, Sampson K
Solid-State Electronics, 51(6), 828, 2007 |
| 10 |
Characterization of silicon-germanium heterojunction bipolar transistors degradation in silicon-germanium BiCMOS technologies
Lee SY, Park CW
Solid-State Electronics, 50(3), 333, 2006 |
