화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Capacitance estimation for In As Tunnel FETs by means of full-quantum k . p simulation
Gnani E, Baravelli E, Gnudi A, Reggiani S, Baccarani G
Solid-State Electronics, 108, 104, 2015
2 V-DD scalability of FinFET SRAMs: Robustness of different design options against LER-induced variations
Baravelli E, De Marchi L, Speciale N
Solid-State Electronics, 54(9), 909, 2010
3 Fin shape fluctuations in FinFET: Correlation to electrical variability and impact on 6-T SRAM noise margins
Baravelli E, De Marchi L, Speciale N
Solid-State Electronics, 53(12), 1303, 2009
4 Wavelet-based adaptive mesh generation for device simulation
De Marchi L, Franze F, Baravelli E, Speciale N
Solid-State Electronics, 50(4), 650, 2006