검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Understanding the growth of p-doped 4H-SiC layers using vapour-liquid-solid transport Vo-Ha A, Carole D, Lazar M, Tournier D, Cauwet F, Souliere V, Thierry-Jebali N, Brosselard P, Planson D, Brylinski C, Ferro G Thin Solid Films, 548, 125, 2013 |
| 2 |
Edge termination strategies for a 4 kV 4H-SiC thyristor Brosselard P, Planson D, Scharnholz S, Raynaud C, Zorngiebel V, Lazar M, Chante JP, Spahn E Solid-State Electronics, 50(7-8), 1183, 2006 |
| 3 |
P-type SiC layers formed by VLS induced selective epitaxial growth Lazar M, Jacquier C, Dubois C, Raynaud C, Ferro G, Planson D, Brosselard P, Monteil Y, Chante JP Materials Science Forum, 483, 633, 2005 |
| 4 |
A 3.5 kV thyristor in 4H-SiC with a JTE periphery Brosselard P, Bouchet T, Planson D, Scharnholz S, Paques G, Lazar M, Raynaud C, Chante JP, Spahn E Materials Science Forum, 483, 1005, 2005 |
| 5 |
SiC-based current limiter devices Chante JP, Tournier D, Planson D, Raynaud C, Lazar M, Locatelli ML, Brosselard P Materials Science Forum, 457-460, 951, 2004 |
| 6 |
Influence of different peripheral protections on the breakover voltage of a 4H-SiC GTO thyristor Brosselard P, Zorngiebel V, Planson D, Scharnholz S, Chante JP, Spahn E, Raynaud C, Lazar M Materials Science Forum, 457-460, 1129, 2004 |
| 7 |
Fabrication and characterisation of high-voltage SiC-thyristors Zorngiebel V, Scharnholz S, Spahn E, Brosselard P, Arssi N, Chante JP, Planson D, Raynaud C, Spangenberg B, Kurz H Materials Science Forum, 433-4, 883, 2002 |