검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
Direct spectroscopic evidence of the influence of chamber wall condition on oxide etch rate Lee S, Tien YC, Hsu CF Plasma Chemistry and Plasma Processing, 19(2), 285, 1999 |
| 2 |
Fluorocarbon Radicals and Surface-Reactions in Fluorocarbon High-Density Etching Plasma .1. O-2 Addition to Electron-Cyclotron-Resonance Plasma Employing Chf3 Takahashi K, Hori M, Goto T Journal of Vacuum Science & Technology A, 14(4), 2004, 1996 |