화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Atomic layer epitaxy of copper - Growth and selectivity in the Cu(II)-2,2,6,6-tetramethyl-3,5-heptanedionate/H-2 process
Martensson P, Carlsson JO
Journal of the Electrochemical Society, 145(8), 2926, 1998
2 Deposition mechanism of MOCVD copper films in the presence of water vapor
Kim JY, Lee YK, Park HS, Park JW, Park DK, Joo JH, Lee WH, Ko YK, Reucroft PJ, Cho BR
Thin Solid Films, 330(2), 190, 1998
3 Cu CVD from Copper(II) Hexafluoroacetylacetonate .1. A Cold-Wall Reactor Design, Blanket Growth-Rate, and Natural Selectivity
Chen YD, Reisman A, Turlik I, Temple D
Journal of the Electrochemical Society, 142(11), 3903, 1995