| 1 |
Numerical Simulations of a 96-rod Polysilicon CVD Reactor
Tang GQ, Chen C, Cai YF, Zong B, Cai YG, Wang TH
Journal of Crystal Growth, 489, 68, 2018 |
| 2 |
Numerical simulation of thermoconvective flows and more uniform depositions in a cold wall rectangular APCVD reactor
Nicolas X, Benzaoui A, Xin SH
Journal of Crystal Growth, 310(1), 174, 2008 |
| 3 |
Effects of Substrate Distance on Radiation Heat Transfer in Thermal CVD Reactor
Kim YH, Lee YS, Lee DW, Rhee GH
Journal of Industrial and Engineering Chemistry, 13(5), 793, 2007 |
| 4 |
Identification of a deposition rate profile subspace corresponding to spatially-uniform films in planetary CVD reactors: a new criterion for uniformity control
Adomaitis RA
Computers & Chemical Engineering, 29(4), 829, 2005 |
| 5 |
Numerical Analysis of Thermal and Flow Fields Inside a Thermal CVD Reactor
Kim YH, Lee YS, Lee DW, Rhee GH
Journal of Industrial and Engineering Chemistry, 11(3), 465, 2005 |
| 6 |
A tailored optimization strategy for PDE-based design: application to a CVD reactor
Itle GC, Salinger AG, Pawlowski RP, Shadid JN, Biegler LT
Computers & Chemical Engineering, 28(3), 291, 2004 |
| 7 |
Growth of GaN Nanowires on Si Substrate Using Ni Catalyst in Vertical Chemical Vapor Deposition Reactor
Kim TY, Lee SH, Mo YH, Shim HW, Nahm KS, Suh EK, Park GS
Korean Journal of Chemical Engineering, 21(1), 257, 2004 |
| 8 |
Surface preparation of 6H-silicon carbide substrates for growth of high-quality SiC epilayers
Lee KS, Lee SH, Kim M, Nahm KS
Materials Science Forum, 457-460, 797, 2004 |
| 9 |
Numerical and experimental study of polysilicon deposition on silicon tubes
Cai D, Zheng LL, Wan Y, Hariharan AV, Chandra M
Journal of Crystal Growth, 250(1-2), 41, 2003 |
| 10 |
Catalytic Effect of Metal Elements on the Growth of GaN and Mg-doped GaN Micro-Crystals
Nahm KS, Kim TY, Lee SH
Korean Journal of Chemical Engineering, 20(4), 653, 2003 |
