검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
A Sub-35 pW Axon-Hillock artificial neuron circuit Danneville F, Loyez C, Carpentier K, Sourikopoulos I, Mercier E, Cappy A Solid-State Electronics, 153, 88, 2019 |
| 2 |
Effect of gate length in InAs/AlSb HEMTs biased for low power or high gain Borg M, Lefebvre E, Malmkvist M, Desplanque L, Wallart X, Roelens Y, Dambrine G, Cappy A, Bollaert S, Grahn J Solid-State Electronics, 52(5), 775, 2008 |
| 3 |
Ballistic nano-devices for high frequency applications Bollaert S, Cappy A, Roelens Y, Galloo JS, Gardes C, Teukam Z, Wallart X, Mateos J, Gonzalez T, Vasallo BG, Hackens B, Berdnarz L, Huynen I Thin Solid Films, 515(10), 4321, 2007 |
| 4 |
The indium content in metamorphic InxAl1-xAs/InxGa1-xAs HEMTs on GaAs substrate: a new structure parameter Bollaert S, Cordier Y, Zaknoune M, Happy H, Hoel V, Lepilliet S, Theron D, Cappy A Solid-State Electronics, 44(6), 1021, 2000 |
| 5 |
Isolation of a lattice-mismatched AlInAs/GaInAs layer on InP using ion implantation for high energy mobility transistor realization (vol 15, pg 1008, 1997) Fourre H, Pesant JC, Schuler O, Cappy A Journal of Vacuum Science & Technology B, 16(1), 255, 1998 |
| 6 |
Isolation of a Lattice-Mismatched Alinas/GaInAs Layer on InP Using Ion-Implantation for High-Energy Mobility Transistor Realization Fourre H, Pesant JC, Schuler O, Cappy A Journal of Vacuum Science & Technology B, 15(4), 1008, 1997 |
| 7 |
Selective Wet Etching of Lattice-Matched InGaAs/InAlAs on InP and Metamorphic InGaAs/InAlAs on GaAs Using Succinic Acid Hydrogen-Peroxide Solution Fourre H, Diette F, Cappy A Journal of Vacuum Science & Technology B, 14(5), 3400, 1996 |
| 8 |
Selective Wet Etching of Lattice-Matched InGaAs/InAlAs on InP and Metamorphic InGaAs/InAlAs on GaAs Using Succinic Acid Hydrogen-Peroxide Solution (Vol 14, Pg 3400, 1996) Fourre H, Diette F, Cappy A Journal of Vacuum Science & Technology B, 14(6), 3603, 1996 |