Previous Article Next Article Table of Contents Journal of Vacuum Science & Technology B, Vol.16, No.1, 255-255, 1998 Export Citation Isolation of a lattice-mismatched AlInAs/GaInAs layer on InP using ion implantation for high energy mobility transistor realization (vol 15, pg 1008, 1997) Fourre H, Pesant JC, Schuler O, Cappy A Please enable JavaScript to view the comments powered by Disqus.
