검색결과 : 30건
| No. | Article |
|---|---|
| 1 |
Diffusion-controlled selective wet etching of ZnCdO over ZnO Chen JJ, Ren F, Norton DP, Pearton SJ, Osinsky A, Dong JW, Chu SNG Electrochemical and Solid State Letters, 8(12), G359, 2005 |
| 2 |
Improvement of GaAs metal-semiconductor field-effect transistor drain-source breakdown voltage by oxide surface passivation grown by atomic layer deposition Ye PD, Wilk DG, Yang B, Chu SNG, Ng KK, Bude J Solid-State Electronics, 49(5), 790, 2005 |
| 3 |
Oscillatory behavior during the anodization of InP Harvey E, Buckley DN, Chu SNG Electrochemical and Solid State Letters, 5(4), G22, 2002 |
| 4 |
Origins of cracking in highly porous anodically grown films on InP Harvey E, Buckley DN, Chu SNG, Sutton D, Newcomb SB Journal of the Electrochemical Society, 149(9), B398, 2002 |
| 5 |
Magnetic and structural properties of Fe, Ni, and Mn-implanted SiC Theodoropoulou N, Hebard AF, Chu SNG, Overberg ME, Abernathy CR, Pearton SJ, Wilson RG, Zavada JM, Park YD Journal of Vacuum Science & Technology A, 20(3), 579, 2002 |
| 6 |
Characterization of high dose Mn, Fe, and Ni implantation into p-GaN Pearton SJ, Overberg ME, Thaler G, Abernathy CR, Theodoropoulou N, Hebard AF, Chu SNG, Wilson RG, Zavada JM, Polyakov AY, Osinsky AV, Norris PE, Chow PP, Wowchack AM, Van Hove JM, Park YD Journal of Vacuum Science & Technology A, 20(3), 721, 2002 |
| 7 |
Room temperature magnetism in GaMnP produced by both ion implantation and molecular-beam epitaxy Overberg ME, Gila BP, Thaler GT, Abernathy CR, Pearton SJ, Theodoropoulou NA, McCarthy KT, Arnason SB, Hebard AF, Chu SNG, Wilson RG, Zavada JM, Park YD Journal of Vacuum Science & Technology B, 20(3), 969, 2002 |
| 8 |
Single-crystal GaN/Gd2O3/GaN heterostructure Hong M, Kwo J, Chu SNG, Mannaerts JP, Kortan AR, Ng HM, Cho AY, Anselm KA, Lee CM, Chyi JI Journal of Vacuum Science & Technology B, 20(3), 1274, 2002 |
| 9 |
Comparison of AlGaN/GaN high electron mobility transistors grown on AlN/SiC templates or sapphire Johnson JW, Han J, Baca AG, Briggs RD, Shul RJ, Wendt JR, Monier C, Ren F, Luo B, Chu SNG, Tsvetkov D, Dmitriev V, Pearton SJ Solid-State Electronics, 46(4), 513, 2002 |
| 10 |
High breakdown M-I-M structures on bulk AlN Luo B, Johnson JW, Kryliouk O, Ren F, Pearton SJ, Chu SNG, Nikolaev AE, Melnik YV, Dmitriev VA, Anderson TJ Solid-State Electronics, 46(4), 573, 2002 |