검색결과 : 1건
No. | Article |
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1 |
Extraction and modeling of layout-dependent MOSFET gate-to-source/drain fringing capacitance in 40 nm technology Sun LJ, Shang GB, Liu LL, Cheng J, Guo A, Ren Z, Hu SJ, Chen SM, Zhao YH, Chan MS, Zhang L, Li XJ, Shi YL Solid-State Electronics, 111, 118, 2015 |