검색결과 : 4건
No. | Article |
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1 |
Structural, chemical, and electrical parameters of Au/MoS2/n-GaAs metal/2D/3D hybrid heterojunction Padma R, Lee G, Kang JS, Jun SC Journal of Colloid and Interface Science, 550, 48, 2019 |
2 |
A comparative electrical transport study on Cu/n-type InP Schottky diode measured at 300 and 100 K Kim H, Jung CY, Kim SH, Cho Y, Kim DW Current Applied Physics, 16(1), 37, 2016 |
3 |
Electrical transport mechanisms in amorphous/crystalline silicon heterojunction: Impact of passivation layer thickness Mikolasek M, Nemec M, Vojs M, Jakabovic J, Rehacek V, Zhang D, Zeman M, Harmatha L Thin Solid Films, 558, 315, 2014 |
4 |
ICP-induced defects in GaN characterized by capacitance analysis Lan WH, Huang KC, Huang KF Solid-State Electronics, 50(11-12), 1677, 2006 |