| 1 |
A quantum wave based compact modeling approach for the current in ultra-short DG MOSFETs suitable for rapid multi-scale simulations
Hosenfeld F, Horst F, Iniguez B, Lime F, Kloes A
Solid-State Electronics, 137, 70, 2017 |
| 2 |
A simple compact model for long-channel junctionless Double Gate MOSFETs
Lime F, Santana E, Iniguez B
Solid-State Electronics, 80, 28, 2013 |
| 3 |
Compact modeling solutions for short-channel SOI Schottky barrier MOSFETs
Schwarz M, Holtij T, Kloes A, Iniguez B
Solid-State Electronics, 82, 86, 2013 |
| 4 |
Automatic parameter extraction technique for gate leakage current modeling in double gate MOSFET
Darbandy G, Gneiting T, Alius H, Alvarado J, Cerdeira A, Iniguez B
Solid-State Electronics, 89, 111, 2013 |
| 5 |
Threshold voltage, and 2D potential modeling within short-channel junctionless DG MOSFETs in subthreshold region
Holtij T, Schwarz M, Kloes A, Iniguez B
Solid-State Electronics, 90, 107, 2013 |
| 6 |
Fully depleted double-gate MSDRAM cell with additional nonvolatile functionality
Park KH, Bawedin M, Lee JH, Bae YH, Na KI, Lee JH, Cristoloveanu S
Solid-State Electronics, 67(1), 17, 2012 |
| 7 |
Analytical compact modeling framework for the 2D electrostatics in lightly doped double-gate MOSFETs
Schwarz M, Holtij T, Kloes A, Iniguez B
Solid-State Electronics, 69, 72, 2012 |
| 8 |
A formula for the central potential's maximum magnitude in arbitrarily doped symmetric double-gate MOSFETs
Garcia-Sanchez FJ, Ortiz-Conde A
Solid-State Electronics, 76, 112, 2012 |
| 9 |
Direct determination of threshold condition in DG-MOSFETs from the g(m)/I-D curve
Cunha AIA, Pavanello MA, Trevisoli RD, Galup-Montoro C, Schneider MC
Solid-State Electronics, 56(1), 89, 2011 |
| 10 |
Double-gate 1T-DRAM cell using nonvolatile memory function for improved performance
Park KH, Cristoloveanu S, Bawedin M, Bae Y, Na KI, Lee JH
Solid-State Electronics, 59(1), 39, 2011 |
